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DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ135 NPN 6.5 GHz wideband transistor
Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 1997 Nov 07
Philips Semiconductors
Product specification
NPN 6.5 GHz wideband transistor
FEATURES * Optimum temperature profile and excellent reliability properties ensured by emitter-ballasting resistors and application of gold sandwich metallization. APPLICATIONS * MATV and microwave amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. QUICK REFERENCE DATA SYMBOL VCEO IC Ptot hFE fT GUM PARAMETER collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency Tc 145 C IC = 120 mA; VCE = 18 V; Tamb = 25 C IC = 120 mA; VCE = 18 V; f = 1 GHz; Tamb = 25 C open base CONDITIONS MIN. - - - 55 - - - - TYP. - - - - 6.5 17 13.5 1.2 DESCRIPTION NPN wideband transistor in a 4-lead dual-emitter SOT172A2 package with a ceramic cap. All leads are isolated from the mounting base. PINNING
2
fpage
BFQ135
4
3 1
PIN 1 2, 4 3
DESCRIPTION collector emitter base
Top view
MSA457
Fig.1 SOT172A2.
MAX. 19 150 2.7 - - - - -
UNIT V mA W GHz dB dB V
maximum unilateral power gain IC = 120 mA ; VCE = 18 V; f = 500 MHz; Tamb = 25 C IC = 120 mA; VCE = 18 V; f = 800 MHz; Tamb = 25 C
VO
output voltage
dim = -60 dB; IC = 120 mA; VCE = 18 V; RL = 75 ; fp + fq - fr = 793.25 MHz; Tamb = 25 C WARNING
Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
1997 Nov 07
2
Philips Semiconductors
Product specification
NPN 6.5 GHz wideband transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Tc 145 C open base open collector CONDITIONS open emitter - - - - - -65 - MIN.
BFQ135
MAX. 25 19 2 150 2.7 +150 200 V V V
UNIT
mA W C C
THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER thermal resistance from junction to case VALUE 20 UNIT K/W
1997 Nov 07
3
Philips Semiconductors
Product specification
NPN 6.5 GHz wideband transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE Cc Ce Cre fT GUM PARAMETER collector cut-off current DC current gain collector capacitance emitter capacitance feedback capacitance transition frequency maximum unilateral power gain (note 1) CONDITIONS IE = 0; VCB = 18 V IC = 120 mA; VCE = 18 V; Tamb = 25 C IE = ie = 0; VCB = 18 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 0; VCE = 18 V; f = 1 MHz IC = 120 mA; VCE = 18 V; f = 1 GHz; Tamb = 25 C IC = 120 mA; VCE = 18 V; f = 500 MHz; Tamb = 25 C IC = 120 mA; VCE = 18 V; f = 800 MHz; Tamb = 25 C VO d2 output voltage second order intermodulation distortion note 2 note 3 note 4 note 5 MIN. - 55 - - - - - - - - - - TYP. - - 1.8 5.5 1 6.5 17 13.5 1.35 1.2 -70 -70
BFQ135
MAX. 50 - - - 1.2 - - - - - - -
2
UNIT A
pF pF pF GHz dB dB V V dB dB
Notes
S 21 1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log ------------------------------------------------------------- dB . - 2 2 1 - S 11 1 - S 22
2. dim = -60 dB (DIN 45004B); IC = 120 mA; VCE = 18 V; RL = 75 ; Tamb = 25 C; Vp = VO at dim = -60 dB; fp = 445.25 MHz; Vq = VO -6 dB; fq = 453.25 MHz; Vr = VO -6 dB; fr = 455.25 MHz; measured at fp + fq - fr = 443.25 MHz. 3. dim = -60 dB (DIN 45004B); IC = 120 mA; VCE = 18 V; RL = 75 ; Tamb = 25 C; Vp = VO at dim = -60 dB; fp = 795.25 MHz; Vq = VO -6 dB; fq = 803.25 MHz; Vr = VO -6 dB; fr = 805.25 MHz; measured at fp + fq - fr = 793.25 MHz. 4. IC = 90 mA; VCE = 18 V; VO = 50 dBmV; Tamb = 25 C; fp = 50 MHz; fq = 400 MHz; measured at fp + fq = 450 MHz. 5. IC = 90 mA; VCE = 18 V; VO = 50 dBmV; Tamb = 25 C; fp = 250 MHz; fq = 560 MHz; measured at fp + fq = 810 MHz.
1997 Nov 07
4
Philips Semiconductors
Product specification
NPN 6.5 GHz wideband transistor
BFQ135
handbook, full pagewidth
VBB 10 nF 10 nF
10 k input 75 L1
1 pF
,
L2 10 nF L4 240 L3 L6 L5 DUT 33 33
10 nF
4.7 F
VCC
10 nF
output 75
1 pF
MEA260
L1 = 8 nH. L2 = 15 nH (2 turns copper wire, internal diameter 2 mm). L3 = 10 nH (2 turns copper wire, internal diameter 1.5 mm). L5: Lp = 21 mm; Rc = 75 . L6: Lp = 16 mm; Rc = 75 .
Fig.2 Intermodulation distortion test circuit.
MBB294
handbook, halfpage
160
handbook, halfpage
8
MBB296
h FE
fT (GHz) 6
120
4
80 2
40 0 40 80 120 160 I C (mA)
0 0 40 80 120 I C (mA) 160
VCE = 18 V; Tamb = 25 C.
VCE = 18 V; f = 1 GHz; Tamb = 25 C.
Fig.3
DC current gain as a function of collector current; typical values.
Fig.4
Transition frequency as a function of collector current; typical values.
1997 Nov 07
5
Philips Semiconductors
Product specification
NPN 6.5 GHz wideband transistor
BFQ135
MEA954
MEA956
-30 d im (dB) -40
-40
d2 (dB)
-50 -60 -60
-70
-80 50 150 I C (mA) 250
-80 0 100 I C (mA) 200
VCE = 18 V.
VCE = 18 V; VO = 50 dBmV; Tamb = 25 C; measured at fp + fq = 450 MHz.
Fig.5
Intermodulation distortion as a function of collector current; typical values.
Fig.6
Second order intermodulation distortion as a function of collector current; typical values.
MEA955
-40
d2 (dB)
-60
-80 0 100 I C (mA) 200
VCE = 18 V; VO = 50 dBmV; Tamb = 25 C; measured at fp + fq = 810 MHz.
Fig.7
Second order intermodulation distortion as a function of collector current; typical values.
1997 Nov 07
6
Philips Semiconductors
Product specification
NPN 6.5 GHz wideband transistor
PACKAGE OUTLINE Studded ceramic package; 4 leads
BFQ135
SOT172A2
D
A Q D1 N2 N N3 M1 X H b D2 A w1 M A c M W
detail X
4
b1 H
1
3
2
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 5.51 4.45 0.217 0.175 b 1.66 1.39 0.065 0.055 b1 0.89 0.63 0.035 0.025 c 0.16 0.10 0.006 0.004 D 5.20 4.95 D1 5.33 5.08 D2 5.33 5.08 H 23.37 22.35 0.92 0.88 M 3.05 2.79 0.12 0.11 M1 1.66 1.39 N 11.56 11.04 N2 8.38 7.62 0.33 0.30 N3 3.69 2.92 0.145 0.115 Q 2.95 2.43 0.116 0.096 W w1 0.38 8-32 UNC 0.015
0.205 0.210 0.210 0.195 0.200 0.200
0.065 0.465 0.055 0.435
OUTLINE VERSION SOT172A2
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
1997 Nov 07
7
Philips Semiconductors
Product specification
NPN 6.5 GHz wideband transistor
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Short-form specification Limiting values
BFQ135
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Nov 07
8
Philips Semiconductors
Product specification
NPN 6.5 GHz wideband transistor
NOTES
BFQ135
1997 Nov 07
9
Philips Semiconductors
Product specification
NPN 6.5 GHz wideband transistor
NOTES
BFQ135
1997 Nov 07
10
Philips Semiconductors
Product specification
NPN 6.5 GHz wideband transistor
NOTES
BFQ135
1997 Nov 07
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127127/00/02/pp12
Date of release: 1997 Nov 07
Document order number:
9397 750 02763

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